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Transition metal dichalcogenides (TMDs), especially in two-dimensional (2D) form, exhibit many properties desirable for device applications. However, device performance can be hindered by the presence of defects. Here, we combine state of the art experimental and computational approaches to determine formation energies and charge transition levels of defects in bulk and 2D MX₂(M = Mo or W; X = S, Se, or Te). We perform deep level transient spectroscopy (DLTS) measurements of bulk TMDs. Simultaneously, we calculate formation energies and defect levels of all native point defects, which enable identification of levels observed in DLTS and extend our calculations to vacancies in 2D TMDs, for which DLTS is challenging. We find that reduction of dimensionality of TMDs to 2D has a significant impact on defect properties. This finding may explain differences in optical properties of 2D TMDs synthesized with different methods and lays foundation for future developments of more efficient TMD-based devices.

The emergence of spin‐orbit torques as a promising approach to energy‐efficient magnetic switching has generated large interest in material systems with easily and fully tunable spin‐orbit torques. Here, current‐induced spin‐orbit torques in VO₂/NiFe heterostructures are investigated using spin‐torque ferromagnetic resonance, where the VO₂layer undergoes a prominent insulator‐metal transition. A roughly twofold increase in the Gilbert damping parameter, α, with temperature is attributed to the change in the VO₂/NiFe interface spin absorption across the VO₂phase transition. More remarkably, a large modulation (±100%) and a sign change of the current‐induced spin‐orbit torque across the VO₂phase transition suggest two competing spin‐orbit torque generating mechanisms. The bulk spin Hall effect in metallic VO₂, corroborated by the first‐principles calculation of the spin Hall conductivity , is verified as the main source of the spin‐orbit torque in the metallic phase. The self‐induced/anomalous torque in NiFe, with opposite sign and a similar magnitude to the bulk spin Hall effect in metallic VO₂, can be the other competing mechanism that dominates as temperature decreases. For applications, the strong tunability of the torque strength and direction opens a new route to tailor spin‐orbit torques of materials that undergo phase transitions for new device functionalities.